RLA-3100 Lamp Annealing System for Rapid Thermal Processing

This system for 4- to 8-inch wafers performs activation and oxidation in a vacuum (LP) environment and N2 load-lock atmosphere. The upper and lower cross lamps (halogen) and a soaking system are used for higher in-plane temperature distribution uniformity.

Features

  • Upper & lower cross lamp structure and heat uniformizing unit improve the uniformity of in-plane temperature
  • 4- to 8-inch wafer size is available
  • Multi-axis clean robot enables high-speed and accurate wafer transfer
  • Max 50 wafers continuous processing is available
  • Equipped with an operator-friendly high performance control system
  • Vacuum designed quartz tube enables accurate gas substitution and process at vacuum pressure

Overview

This lamp annealing system can process a maximum of 50 wafers (4-inch to 8-inch) through high-speed heating at 200°C/sec. The upper and lower cross halogen lamps achieve superior uniform in-plane temperature distribution. Thanks to the quartz tube designed to be resistant to vacuum, wafers can be processed in a clean vacuum (LP) environment and N2 load lock atmosphere.

Specifications

Outer dimension (mm) W900×D1850×H2580 mm
Operation temperature 400 to 1200°C
Heat up rate Max. 200°C/sec
Lamp layout Upper & lower cross lamp arrays
Number of control zone 6
Wafer size 4 to 8 inch
I/O port 2
Wafer transfer Single wafer / multi-axis clean robot
Options Vacuum system
HOST communication (HSMS/GEM)
N2 Load Lock

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